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Memorias de investigación
Artículos en revistas:
Refractive indexes and extinction coefficients of n- and p-type doped GainP and AlGaInP for Multijunction Solar Cells
Año:2017
Áreas de investigación
  • Células solares
Datos
Descripción
The optical properties of p-type, n-type and nominally undoped (AlxGa1?x)yIn1?yP layers have been determined in a wide spectral range. The layers under study have been chosen with compositions and dopant concentrations which make them interesting for their use in III-V multijunction solar cells. The layers have been measured by variable angle spectroscopic ellipsometry and, irrespective of composition and doping, their optical response has been modelled using the same model dielectric function consisting of two asymmetric Tauc-Lorentz oscillators and a 3D-M0 Adachi term. The results show that transition energy values change with layer composition, whilst for layers of the same material (i.e. GaInP or AlInP), the band-gap transition energy E0 shows a strong dependence on the order parameter. The refractive indexes and extinction coefficients deduced from the ellipsometric data have been used to fit reflectance measurements for the same layers and an excellent agreement has been achieved, thus validating the model dielectric function proposed for this kind of materials.
Internacional
Si
JCR del ISI
Si
Título de la revista
Solar Energy Materials And Solar Cells
ISSN
0927-0248
Factor de impacto JCR
4,732
Información de impacto
Datos JCR del año 2015
Volumen
174
DOI
Número de revista
Desde la página
388
Hasta la página
396
Mes
SIN MES
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Participantes
  • Autor: Efraín Ochoa-Martínez
  • Autor: Laura Barrutia Poncela (UPM)
  • Autor: Mario Ochoa Gómez (UPM)
  • Autor: Enrique Barrigón Montañés
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: Peter Basa
  • Autor: Gergely Kronome
  • Autor: Mercedes Gabás
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
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