Memorias de investigación
Communications at congresses:
Component Integration Effects in 4-junction Solar Cells with Dilute Nitride 1eV Subcell
Year:2017
Research Areas
  • Engineering
Information
Abstract
A GaInP/Ga(In)As/GaNAsSb/Ge 4-junction solar cell grown using combined MOVPE+MBE growth is used to analyze the effects during the integration of the subcell components into the full 4J structure. In this preliminary study, the Ge subcell is observed to suffer about 15% Jsc drop and ~50 mV Voc loss at 1-sun, while the Voc of the GaNAsSb subcell drops by as much as ~ 140 mV. The degradation of the Ge and GaNAsSb subcells in the current-matched 4J structure can hinder its efficiency potential to a higher extent than in the GaInP/Ga(In)As/Ge 3J. Besides, high quality GaNAsSb and Ge subcells would still limit the current and require redesigning the top subcells to achieve optimum efficiencies
International
Si
Congress
IEEE 44th Photovoltaic Specialists Conference
960
Place
Washington DC
Reviewers
Si
ISBN/ISSN
978-1-5090-2724-8
Start Date
25/06/2017
End Date
30/06/2017
From page
1
To page
5
Proceedings
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
  • Centro o Instituto I+D+i: Instituto de Energía Solar