Descripción
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Laser crystallization of amorphous or microcrystalline silicon films to obtain high-quality polycrystalline films is one of the most promising methods for diminishing costs in the microelectronic and solar cells sectors. During a laser crystallization process light is partially absorbed by the amorphous silicon, heating the sample and, if the temperature rises high enough, causing the reorganization of the film structure into a crystalline one. In this work we show results on the crystallization of non-hydrogenated silicon thin-films by a continuous wave infrared laser, as well as a study of the process with a simple finite elements method (FEM) numerical model based in the dimensional non-linear heat transfer equation with a steady heat source. | |
Internacional
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No |
Nombre congreso
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Industriales Research Meeting 2017 |
Tipo de participación
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970 |
Lugar del congreso
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Madrid |
Revisores
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Si |
ISBN o ISSN
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978-84-16397-58-7 |
DOI
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Fecha inicio congreso
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04/04/2017 |
Fecha fin congreso
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05/04/2017 |
Desde la página
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1 |
Hasta la página
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1 |
Título de las actas
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Industriales Research Meeting 2017 |