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Descripción
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| A GaInP/Ga(In)As/GaNAsSb/Ge 4J solar cell grown using the combined MOVPE + MBE method is presented. This structure is used as a test bench to assess the effects caused by the integration of subcells and tunnel junctions into the full 4J structure. A significant degradation of the Ge bottom subcell emitter is observed during the growth of the GaNAsSb subcell, with a drop in the carrier collection efficiency at the high energy photon range that causes a ~15% lower Jsc and a Voc drop of ~50 mV at 1-sun. The Voc of the GaNAsSb subcell is shown to drop by as much as ~140 mV at 1-sun. No degradation in performance is observed in the tunnel junctions, and no further degradation is neither observed for the Ge subcell during the growth of the GaInP/Ga(In)As subcells. The hindered efficiency potential in this lattice-matched 4J architecture due to the degradation of the Ge and GaNAsSb subcells is discussed. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Progress in Photovoltaics |
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ISSN
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1062-7995 |
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Factor de impacto JCR
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6,726 |
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Información de impacto
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Volumen
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25 |
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DOI
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10.1002/pip.2930 |
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Número de revista
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11 |
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