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Abstract
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| We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6°misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (η) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains. | |
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International
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Si |
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JCR
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Si |
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Title
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Physical Chemistry Chemical Physics |
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ISBN
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1463-9076 |
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Impact factor JCR
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4,123 |
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Impact info
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Volume
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19 |
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10.1039/c7cp01125c |
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Journal number
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15 |
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From page
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9806 |
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To page
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9810 |
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Month
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SIN MES |
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Ranking
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