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Descripción
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| We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtB single variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6°misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (η) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Physical Chemistry Chemical Physics |
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ISSN
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1463-9076 |
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Factor de impacto JCR
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4,123 |
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Información de impacto
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Volumen
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19 |
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DOI
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10.1039/c7cp01125c |
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Número de revista
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15 |
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