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Descripción
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| The growth of a GaP 50 nm layer on Si by metalorganic vapor phase epitaxy is studied using AsH3 and PH3 pre-exposure at low (550 °C) and high (800 °C) growth temperatures. The samples are characterized by transmission electron microscopy. The results obtained reveal that the use of As as a first coverage layer on top of misorientated Si-substrates favors the formation of a defect-free GaP epitaxial layer, for a wide range of AsH3 pre-exposure times using high growth temperature (800 °C), even though relatively low Si substrate annealing temperatures are used (850 °C) and no homoepitaxial Si layer was first grown. The procedure presented in this work reduces the thermal budget and complexity compared to most previous GaP/Si routines. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Journal of Crystal Growth |
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ISSN
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0022-0248 |
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Factor de impacto JCR
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1,751 |
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Información de impacto
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Volumen
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464 |
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DOI
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10.1016/j.jcrysgro.2016.11.077 |
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Número de revista
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Desde la página
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8 |
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Hasta la página
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13 |
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Mes
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SIN MES |
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Ranking
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