Abstract
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Recent advances on the development of a 4J lattice matched dilute nitride solar cell for terrestrial and space applications are described. Modeling of the solar cell is carried out using a drift-diffusion model and material parameters extracted from ad hoc electro-optical characterization resulting in an efficiency prediction of 47% for concentrations of 1000 suns AM1.5d G173 spectrum and 33% for 1x AM0. First experimental solar cell results of a dual-junction GaNAsSb/Ge solar cell and a triple-junction GaInP/Ga(In)As/GaNAsSb components of the full 4-Junction are shown. | |
International
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Si |
Congress
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44th IEEE Photovoltaic Specialist Conference |
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960 |
Place
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Washington, DC, EEUU |
Reviewers
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Si |
ISBN/ISSN
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978-1-5090-5605-7 |
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10.1109/pvsc.2017.8366123 |
Start Date
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25/06/2017 |
End Date
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30/06/2017 |
From page
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1 |
To page
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6 |
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Proc. 44th IEEE PVSC |