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Descripción
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| An increased total dose of phosphorus (P dose) in the ?rst 40 nm of a phosphorus di used emitter has been measured after Low Temperature Annealing (LTA) at 700 ?C using the Glow Discharge Optical Emission Spectrometry (GD-OES) technique. This evidence has been observed in three versions of the same emitter containing di erent amounts of initial hosphorus. A stepwise chemical etching of a di used phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the ?rst 40 nm increases during annealing by 1.4?1015 cm?2 for the sample with the highly-doped emitter, by 0.8?1015 cm?2 in the middle-doped emitter, and by 0.5?1015 cm?2 in the lowest-doped emitter. The presence of surface dislocations in the ?rst few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the ?rst 40 nm is lower when this region is etched stepwise. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Journal of Applied Physics |
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ISSN
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0021-8979 |
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Factor de impacto JCR
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2,068 |
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Información de impacto
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Volumen
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123 |
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DOI
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10.1063/1.5002627 |
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Número de revista
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Desde la página
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161535 |
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Hasta la página
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161549 |
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Mes
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SIN MES |
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Ranking
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