|
Abstract
|
|
|---|---|
| An increased total dose of phosphorus (P dose) in the ?rst 40 nm of a phosphorus di used emitter has been measured after Low Temperature Annealing (LTA) at 700 ?C using the Glow Discharge Optical Emission Spectrometry (GD-OES) technique. This evidence has been observed in three versions of the same emitter containing di erent amounts of initial hosphorus. A stepwise chemical etching of a di used phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the ?rst 40 nm increases during annealing by 1.4?1015 cm?2 for the sample with the highly-doped emitter, by 0.8?1015 cm?2 in the middle-doped emitter, and by 0.5?1015 cm?2 in the lowest-doped emitter. The presence of surface dislocations in the ?rst few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the ?rst 40 nm is lower when this region is etched stepwise. | |
|
International
|
Si |
|
JCR
|
Si |
|
Title
|
Journal of Applied Physics |
|
ISBN
|
0021-8979 |
|
Impact factor JCR
|
2,068 |
|
Impact info
|
|
|
Volume
|
123 |
|
|
10.1063/1.5002627 |
|
Journal number
|
|
|
From page
|
161535 |
|
To page
|
161549 |
|
Month
|
SIN MES |
|
Ranking
|
|