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Descripción
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| A 6-18 GHz high power amplifier (HPA) design in GaN on SiC technology is presented. This power amplifier consists of a two stage corporate amplifier which shows an unconditional stable behavior. It has been designed at Indra Sistemas and fabricated following the GH25 process from UMS, using a 0.25 ?m gate length. Small and large signal measurements in pulsed conditions and their comparison with simulations are also discussed. This HPA exhibits an averaged output power of 39.2 dBm with a mean gain of 11 dB in saturation and a 24.5% maximum power added efficiency (PAE) in pulse mode operation. | |
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Internacional
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No |
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Nombre congreso
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XXXIII Simposium Nacional de la Unión Científica Internacional de Radio (URSI 2018) |
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Tipo de participación
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960 |
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Lugar del congreso
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Granada, España |
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Revisores
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Si |
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ISBN o ISSN
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CDP08UPM |
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DOI
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Fecha inicio congreso
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05/09/2018 |
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Fecha fin congreso
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07/09/2018 |
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Desde la página
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1 |
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Hasta la página
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4 |
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Título de las actas
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XXXIII Simposium Nacional de la Unión Científica Internacional de Radio (URSI 2018) |