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Descripción
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| This paper analyzes the non linear distortion behavior of two different architectures of ultra wideband GaN power amplifiers. The study is motivated by an increasing need to characterize non linear distortion in wideband HPAs due to higher carrier frequencies and modulation complexity in modern communications systems. This paper presents the design process and measurements of two general purpose HPAs, manufactured using European GaN technology. Non linear distortion effects are then analyzed in a complex modulation scenario. | |
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Internacional
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No |
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Nombre congreso
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XXXIII Simposium Nacional de la Unión Científica Internacional de Radio (URSI 2018) |
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Tipo de participación
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960 |
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Lugar del congreso
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Granada, España |
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Revisores
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Si |
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ISBN o ISSN
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CDP08UPM |
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DOI
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Fecha inicio congreso
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05/09/2018 |
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Fecha fin congreso
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07/09/2018 |
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Desde la página
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1 |
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Hasta la página
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4 |
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Título de las actas
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XXXIII Simposium Nacional de la Unión Científica Internacional de Radio (URSI 2018) |