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Abstract
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| Simple but powerful rules of thumb, derived from the electrical equivalent circuit of single junction solar cells, are usually applied to understand artifacts in solar cell measurements. However, this can mislead to wrong diagnosis in multijunction solar cells, especially when shunt resistances are involved. Thus, it is important to specify which artifacts can be caused by shunt resistances in a multijunction solar cell. Moreover, as the shunt resistance impact on monojunction solar cells is related to the low voltage operation region, there is a lack of studies regarding its impact on FF or VOC operation points for multijunction solar cells. In this work we point out the differences between the shunt resistance impact in multijunction and single junction solar cell I-V curves under illumination conditions. | |
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International
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Si |
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Congress
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14th International Conference on Concentrator Photovoltaic Systems |
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960 |
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Place
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Puertollano - España |
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Reviewers
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Si |
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ISBN/ISSN
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978-0-7354-1728-1 |
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https://doi.org/10.1063/1.5053525 |
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Start Date
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16/04/2018 |
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End Date
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18/04/2018 |
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From page
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600011 |
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To page
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600016 |
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Proceedings of 14th International Conference on Concentrator Photovoltaic Systems |