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Memorias de investigación
Ponencias en congresos:
Type-II GaAsSb/GaAsN superlattice solar cells
Año:2018
Áreas de investigación
  • Física química y matemáticas,
  • Ingenierías,
  • Células solares
Datos
Descripción
Dilute nitride GaAsSbN is an ideal candidate to form the 1-1.15 eV lattice-matched sub-cell that would significantly enhance the performance of 3- and 4-junction solar cells. However, growth problems inherent to this quaternary alloy lead typically to a poor crystal quality that limits its applicability. Better compositional control and crystal quality have been recently reported by growing the material as a GaAsSb/GaAsN superlattice, because of the spatial separation of Sb and N that avoid miscibility problems. Moreover, these structures provide bandgap tunability trough period thickness. Here we study the performance of lattice-matched 1.15 eV GaAsSb/GaAsN type-II perlattice p-i-n junction solar cells with different period thickness and compare them with the bulk and GaAsSbN/GaAs type-I superlattice counterparts. We demonstrate carrier lifetime tunability through the period thickness in the type-II structures. However, the long carrier lifetimes achievable with periods thicker than 12 nm are incompatible with a high carrier extraction efficiency under short-circuit conditions. Only superlattices with thinner periods and short carrier lifetimes show good solar cell performance. Quantum kinetic calculations based on the non-equilibrium Green?s function (NEGF) formalism predict a change in transport regime from direct tunneling extraction to sequential tunneling with sizable thermionic emission components when passing from 6 nm to 12 nm period length, which for low carrier lifetime results in a decrease of extraction efficiency by more than 30%.
Internacional
Si
Nombre congreso
SPIE OPTO 2018
Tipo de participación
960
Lugar del congreso
San Franciso, EE.UU.
Revisores
Si
ISBN o ISSN
9781510615397
DOI
10.1117/12.2290079
Fecha inicio congreso
27/01/2018
Fecha fin congreso
01/02/2018
Desde la página
1052701
Hasta la página
1052709
Título de las actas
Proceedings Vol 10527 Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: A. Gonzalo
  • Autor: A.D. Utrilla
  • Autor: U. Aeberhard
  • Autor: J.M. Llorens
  • Autor: B. Alén
  • Autor: David Fuertes Marron (UPM)
  • Autor: A. Guzmán
  • Autor: A. Hierro
  • Autor: J.M. Ulloa
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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