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Descripción
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| Infrared photodetectors have applications in areas such as civil security and surveillance, environmental monitoring and telecommunications.1,2 Nowadays, commonly used infrared photodetection devices are based in mercury cadmium telluride3 or quantum-dot infrared photodetectors.4 However, while these materials allow high performances, they suffer some drawbacks, e.g.: high production costs and hardly integration in CMOS (chip complementary metal-oxide semiconductor) technology. Silicon based devices guarantee the low cost and CMOS compatibility criteria. The band gap of silicon is 1.12 eV (1,100 nm), which hiders its applications in the infrared region.5 Hence, the extent of absorption properties of silicon up to the infrared region would be a promising approach to design new Si-based infrared photodetectors. It has been proven that the incorporation of a dopant element creates a partially filled level that allows sub-bandgap absorption.5,6,7,8,9 In this sense, photodiodes based on S-hyperdoped5,9 and Se-yperdoped6,10,11 silicon yield improved spectral response up to the infrared region. | |
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Internacional
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Si |
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DOI
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Edición del Libro
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1 |
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Editorial del Libro
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Real Sociedad Española de Física |
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ISBN
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978-84-0903541-0 |
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Serie
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Título del Libro
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Current Trends in Energy and Sustainability |
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Desde página
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75 |
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Hasta página
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86 |