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Descripción
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| We demonstrate type-II GaAsSb/GaAsN superlattices as a suitable candidate to form a lattice-matched 1.0- 1.15 eV subcell that could significantly improve the performance of multi-junction solar cells. The spatial separation of N and Sb allows better lattice-matching control, composition homogeneity, crystal quality and interface abruptness. Moreover, the type-II band alignment provides effective bandgap and radiative lifetime tunability through the period thickness. For the impact of period thickness on transport, quantum-kinetic simulations support the experimental finding of efficient carrier extraction at thicknesses up to 6 nm. All this leads to single-junction solar cells with improved efficiency under monochromatic illumination over the equivalent bulk devices. | |
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Internacional
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Si |
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Nombre congreso
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7th World Conference on Photovoltaic Energy Conversion |
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Tipo de participación
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960 |
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Lugar del congreso
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Waikoloa, Hawaii, EE.UU. |
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Revisores
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Si |
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ISBN o ISSN
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CDPO8UPM |
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DOI
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Fecha inicio congreso
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10/06/2018 |
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Fecha fin congreso
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15/06/2018 |
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Desde la página
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3463 |
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Hasta la página
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3467 |
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Título de las actas
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Proceedings of 7th World Conference on Photovoltaic Energy Conversion |