Memorias de investigación
Communications at congresses:
Operation of the Three Terminal Heterojunction Bipolar Transistor Solar Cell
Year:2018

Research Areas
  • Engineering

Information
Abstract
The three terminal heterojunction bipolar transistor solar cell (3T-HBTSC) is characterized by a muti-junction solar cell structure that resembles that of a (npn or pnp) bipolar transistor. The top cell consists of the top np (pn) layers which are made of a high bandgap semiconductor. The bottom n(p) layer is made of a low bandgap semiconductor and, together with the middle p(n) layer, forms the bottom solar cell. The transistor structure allows some simplifications in the layer structure with respect to that of conventional multi-junction solar cells since, for example, tunnel junctions are not necessary. In spite of the name, in the 3T-HBTSC the transistor effect has to be avoided since, in the limit, this would result in the voltage of the top cell being limited by the voltage of the bottom cell
International
Si
Congress
European Materials Research Society Spring Meeting
960
Place
Estrasburgo (Francia)
Reviewers
Si
ISBN/ISSN
1610-1642
10.1002/pssc.201700191
Start Date
18/06/2018
End Date
22/06/2018
From page
1700191
To page
1700193
Publicado en Phys. Status Solidi C
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Ingeniería Eléctrica, Electrónica Automática y Física Aplicada
  • Departamento: Electrónica Física