|
Descripción
|
|
|---|---|
| Multi-junction solar cells made by assembling semiconductor materials with different bandgap energies have hold the record conversion efficiencies for many years and are currently approaching 50%. Theoretical efficiency limits make use of optimum designs with the right lattice constant-bandgap energy combination, which requires a 1.0?1.15?eV material lattice-matched to GaAs/Ge. Nevertheless, the lack of suitable semiconductor materials is hindering the achievement of the predicted efficiencies, since the only candidates were up to now complex quaternary and quinary alloys with inherent epitaxial growth problems that degrade carrier dynamics. Here we show how the use of strain-balanced GaAsSb/GaAsN superlattices might solve this problem. We demonstrate that the spatial separation of Sb and N atoms avoids the ubiquitous growth problems and improves crystal quality. | |
|
Internacional
|
Si |
|
Nombre congreso
|
7th World Conference on Photovoltaic Energy Conversion |
|
Tipo de participación
|
960 |
|
Lugar del congreso
|
Waikoloa, Hawaii, EE.UU. |
|
Revisores
|
Si |
|
ISBN o ISSN
|
0741-3106 |
|
DOI
|
|
|
Fecha inicio congreso
|
10/06/2018 |
|
Fecha fin congreso
|
15/06/2018 |
|
Desde la página
|
1 |
|
Hasta la página
|
10 |
|
Título de las actas
|
Proceedings of 7th World Conference on Photovoltaic Energy Conversion |