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Descripción
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| InAs/GaAs QDs grown via the Stranski?Krastanov mode have received considerable attention due to their promising properties in different fields such as solar cells, lasers, detectors, etc. However, the structural properties not only of the QDs, but also of the wetting layer (WL) are strongly affected by the nature and growth conditions of the capping layer (CL)1. On one hand, the QD decomposition could be greatly reduced when CLs of GaAsSb are used instead of GaAs2. On the other hand, the GaAs capping rate also allows kinetically controlling the QD dissolution process3 and thus the thickness and content of the WL. However, the precise analysis of the QD/WL system after the capping process in these systems is complicated, as it requires dealing with a large number of data to provide consistent and reliable results. In this work, we statistically compare the features of samples of 10 InAs QD layers after using CLs of GaAs at different growth rates or a GaAsSb alloy. The chemical characterization of the WL together with the measurement of the morphology of several dozens of buried InAs QDs by (S)TEM related techniques allows us to analyse statistically the QD decomposition obtained under both capping processes. | |
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Internacional
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Si |
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Nombre congreso
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Microscopy at the Frontiers of Science - mfs2019 |
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Tipo de participación
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960 |
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Lugar del congreso
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Granada, España |
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Revisores
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Si |
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ISBN o ISSN
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0000000000000 |
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DOI
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Fecha inicio congreso
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11/09/2019 |
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Fecha fin congreso
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13/09/2019 |
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Desde la página
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49 |
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Hasta la página
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50 |
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Título de las actas
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Proceedings |