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Descripción
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| The aim of this work is to provide an insight into the impact of the P1 shunt on the performance of ZnO/CdS/Cu(In,Ga)Se2/Mo modules with monolithic interconnects. The P1 scribe is a pattern that separates the back contact of two adjacent cells and is filled with Cu(In,Ga)Se2 (CIGS). This scribe introduces a shunt that can affect significantly the behavior of the device, especially under weak light conditions. Based on 2D numerical simulations performed with TCAD, we postulate a mechanism that affects the current flow through the P1 shunt. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Coatings |
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ISSN
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2079-6412 |
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Factor de impacto JCR
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2,35 |
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Información de impacto
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Datos JCR del año 2017 |
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Volumen
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9 |
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DOI
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10.3390/coatings9020128 |
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Número de revista
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Desde la página
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128-1 |
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Hasta la página
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128-10 |
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Mes
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SIN MES |
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Ranking
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