Descripción
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The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction?s bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss) | |
Internacional
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Si |
Nombre congreso
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46th IEEE Photovoltaic Specialists Conference |
Tipo de participación
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960 |
Lugar del congreso
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Chicago (IL) EEUU |
Revisores
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Si |
ISBN o ISSN
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9781728104942 |
DOI
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Fecha inicio congreso
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16/06/2019 |
Fecha fin congreso
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21/06/2019 |
Desde la página
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35 |
Hasta la página
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40 |
Título de las actas
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Conference Record of the IEEE Photovoltaic Specialists Conference |