Communications at congresses:
Demonstrating the GaInP/GaAs three-terminal Heterojunction Bipolar Transistor Solar Cell
Year:2019
Research Areas
- Solar energy,
- Photovoltaic generation
Information
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Abstract
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| The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (VOC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction?s bias from VOC to maximum power point degrades the performance of the other junction only slightly (< 0.5% efficiency loss) | |
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International
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Si |
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Congress
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46th IEEE Photovoltaic Specialists Conference |
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960 |
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Place
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Chicago (IL) EEUU |
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Reviewers
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Si |
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ISBN/ISSN
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9781728104942 |
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Start Date
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16/06/2019 |
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End Date
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21/06/2019 |
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From page
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35 |
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To page
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40 |
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Conference Record of the IEEE Photovoltaic Specialists Conference |
Open Access publication
Participants
- Autor: Marius Harry Zehender . UPM
- Autor: Ivan Garcia Vara UPM
- Autor: Simon Aurel Svatek UPM
- Autor: Myles A. Steiner
- Autor: Pablo Garcia-Linares Fontes UPM
- Autor: Emily Warren
- Autor: Adele Tamboli
- Autor: Antonio Marti Vega UPM
- Autor: Elisa Antolin Fernandez UPM
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Semiconductores III-V
- Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
- Departamento: Electrónica Física
- Departamento: Ingeniería Eléctrica, Electrónica Automática y Física Aplicada
- Centro o Instituto I+D+i: Instituto de Energía Solar