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Abstract
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| Virtual substrates based on thin Ge layers on Si by direct deposition have achieved high quality recently. Their application to high efficiency III-V solar cells is analyzed in this work. Replacing traditional Ge substrates with Ge/Si virtual substrates in standard lattice-matched and upright metamorphic GaInP/Ga(In)As/Ge solar cells is feasible according to our calculations using realistic parameters of state-of-the-art Ge solar cells but with thin bases (< 5µm) | |
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International
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Si |
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Congress
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46th IEEE Photovoltaic Specialists Conference |
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960 |
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Place
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Chicago (IL) EEUU |
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Reviewers
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Si |
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ISBN/ISSN
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9781728104942 |
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Start Date
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16/06/2019 |
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End Date
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21/06/2019 |
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From page
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1444 |
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To page
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1451 |
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Conference Record of the IEEE Photovoltaic Specialists Conference |