Abstract
|
|
---|---|
Virtual substrates based on thin Ge layers on Si by direct deposition have achieved high quality recently. Their application to high efficiency III-V solar cells is analyzed in this work. Replacing traditional Ge substrates with Ge/Si virtual substrates in standard lattice-matched and upright metamorphic GaInP/Ga(In)As/Ge solar cells is feasible according to our calculations using realistic parameters of state-of-the-art Ge solar cells but with thin bases (< 5µm) | |
International
|
Si |
Congress
|
46th IEEE Photovoltaic Specialists Conference |
|
960 |
Place
|
Chicago (IL) EEUU |
Reviewers
|
Si |
ISBN/ISSN
|
9781728104942 |
|
|
Start Date
|
16/06/2019 |
End Date
|
21/06/2019 |
From page
|
1444 |
To page
|
1451 |
|
Conference Record of the IEEE Photovoltaic Specialists Conference |