Abstract
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A broadband (1-16 GHz) balanced MMIC low noise amplifier (LNA) using 100?nm GaAs pHEMT technology is presented in this paper. The proposed topology has been designed and manufactured under and OMMIC or UMS process with a drain voltage of 3,5 V. The simulated gain is 28 dB in the whole bandwidth and the DC power consumption is 280 mW. The simulated room-temperature noise performance is lower than 1.25 dB from 1 to 14 GHz and lower than 1.5 dB in the whole bandwidth while its figure of merit (FOM) is 86 (GHz/mW). | |
International
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Si |
JCR
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Si |
Title
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Proceedings of the 1st European Microwave Conference in Central Europe |
ISBN
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978-2-87487-067-5 |
Impact factor JCR
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Impact info
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Volume
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Journal number
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From page
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91 |
To page
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94 |
Month
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MAYO |
Ranking
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