Memorias de investigación
Communications at congresses:
Combined assessment of Al1-xScxN thin films by RBS, XRD, FTIR and BAW frequency response measurements
Year:2019

Research Areas
  • Sensor devices,
  • Other electronic devices,
  • Materials for electric engineering and electronics,
  • Technology of devices for engineering

Information
Abstract
Al0.7Sc0.3N films were reactively sputtered from Al-Sc segmented targets by ac powered dual-cathode S-gun magnetron. Films with homogeneous Sc concentration within 30 +/- 0.5 at. % were grown at ambient temperature directly on 200-mm (100) silicon wafers and on 100-mm silicon substrates covered with SiO2/Mo-based acoustic reflectors terminated by highly (110) textured Mo electrodes. The piezoelectric assessment derived from the frequency response of bulk acoustic resonators yields values of the electromechanical coupling factor k(2) up to 12.8%. Infrared absorption and X-ray diffraction measurements reveal that tiny structural changes may lead to deviation in the value of k(2) across the wafer, which can be reduced by performing a post-processing heat treatment at around 600 degrees C.
International
Si
Congress
2019 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS)
960
Place
Glasgow, UK
Reviewers
Si
ISBN/ISSN
1948-5719
Start Date
06/10/2019
End Date
09/10/2019
From page
720
To page
723
Proceedings of the 2019 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS)
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Ingeniería Electrónica