Memorias de investigación
Ponencias en congresos:
Two-dimensional MoS2-enabled flexible rectenna for wireless energy harvesting in the Wi-Fi band
Año:2019

Áreas de investigación
  • Tecnología electrónica y de las comunicaciones

Datos
Descripción
MoS2 has attracted substantial attention due to its atomic thickness and outstanding electronic and mechanical properties. As one of the thinnest semiconductors in the world, MoS2 is promising to build flexible electronics that can be integrated with objects with arbitrary shapes and inspires a vision of distributed ubiquitous electronics. Despite recent advances in two-dimensional materials-based electronics (e.g. 2D materials-based transistors, memory devices and sensors), an efficient and flexible energy harvesting solution is necessary, but still missing, to enable a self-powered system. At the same time, the electromagnetic (EM) radiation in the Wi-Fi band (2.4 GHz and 5.9 GHz) is becoming increasingly ubiquitous and it would be beneficial to be able to wirelessly harvest it to power future distributed electronics. However, the rectennas (i.e. RF energy harvesters) based on flexible semiconductors have not been fast enough to cover the Wi-Fi band due to their limited transport properties. Here we present a unique MoS2 semiconducting-metallic phase heterojunction, which enables a flexible and high-speed Schottky diode with a cutoff frequency of 10 GHz. Due to a novel lateral architecture and self-aligned phase engineering, our MoS2 Schottky diode exhibits significantly reduced parasitic capacitance and series resistance. By integrating the MoS2 rectifier with a flexible Wi-Fi band antenna, we successfully fabricate a fully flexible rectenna that demonstrates direct energy harvesting of EM radiation in the Wi-Fi band with zero external bias (battery-free). Moreover, taking advantage of the nonlinearity of the MoS2 Schottky diode, a frequency mixing in the gigahertz range is also successfully demonstrated on flexible substrates.
Internacional
Si
Nombre congreso
Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI (SPIE NanoScience+Engineering)
Tipo de participación
960
Lugar del congreso
San Diego, California, United States
Revisores
Si
ISBN o ISSN
9781510628724
DOI
10.1117/12.2530059
Fecha inicio congreso
11/08/2019
Fecha fin congreso
15/08/2019
Desde la página
1
Hasta la página
1
Título de las actas
Proc. SPIE 11089

Esta actividad pertenece a memorias de investigación

Participantes
  • Autor: Xu Zhang Massachusetts Institute of Technology, Cambridge, MA, USA
  • Autor: Jesus Grajal De la Fuente UPM
  • Autor: Jose Luis Vazquez Roy Universidad Carlos III de Madrid
  • Autor: Ujwal Radhakrishna Massachusetts Institute of Technology, Cambridge, MA, USA
  • Autor: Xiaoxue Wang Massachusetts Institute of Technology, Cambridge, MA, USA
  • Autor: Winston Chern Massachusetts Institute of Technology, Cambridge, MA, USA
  • Autor: Lin Zhou Massachusetts Institute of Technology, Cambridge, MA, USA
  • Autor: Yuhao Zhang Massachusetts Institute of Technology, Cambridge, MA, USA
  • Autor: Han Wang University of Southern California, Los Angeles, CA, USA
  • Autor: Madan Dubey Army Research Laboratory, Adelphi, MD, USA
  • Autor: Jing Kong Massachusetts Institute of Technology, Cambridge, MA, USA
  • Autor: Mildred Dresselhaus Massachusetts Institute of Technology, Cambridge, MA, USA
  • Autor: Tomas Palacios Massachusetts Institute of Technology, Cambridge, MA, USA

Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Centro o Instituto I+D+i: Centro de I+d+i en Procesado de la Información y Telecomunicaciones
  • Departamento: Señales, Sistemas y Radiocomunicaciones