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Abstract
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| The deposition of SiNx:H as anti-reflection coating has become a standard step in industrial production of silicon solar cells. In the present work the improvement of the anti-reflection properties and thus the improvement of the short circuit current density by deposition of a SiNx:H double layer coating are investigated. It is shown that an optimised double layer coating with indices n(1) approximate to 1.8 and n(2) approximate to 2.1 only leads to an 1.3% improvement of short circuit current in comparison to an optimised single layer coating with n approximate to 1.9. But the deposition of a SiNx:H layer with higher refractive index on the silicon surface is supposed to lead to a good surface and bulk passivation. The passivating properties of the optically optimised double layer coating will he investigated in following experiments. | |
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International
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Si |
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Congress
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6th SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS |
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960 |
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Place
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El Escorial, Madrid |
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Reviewers
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Si |
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ISBN/ISSN
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978-1-4244-0868-9 |
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Start Date
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31/01/2007 |
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End Date
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02/02/2007 |
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