|
Descripción
|
|
|---|---|
| he physics of charge-transfer processes in semiconductors is a challenging and longstanding problem. Focusing on Cr-substituted ZnSe semiconductors, important for optoelectronic and spintronic devices, several processes and their energetics are analysed using first-principles. In contrast to the properties exhibited by deep gap levels, our results for highly Cr doped ZnSe show small variations in the equilibrium configurations. forces and electronic density around the Cr for different charge states. Therefore, the delocalization of the electronic charge between the impurity and host leads to a decrease of the effective Coulomb repulsion and becomes then the fundamental mechanism to inhibit nonradiative recombination via multiphonon emission for the modes studied. (C) 2007 Elsevier Ltd. All rights reserved. | |
|
Internacional
|
Si |
|
JCR del ISI
|
Si |
|
Título de la revista
|
SOLID STATE COMMUN |
|
ISSN
|
0038-1098 |
|
Factor de impacto JCR
|
1,535 |
|
Información de impacto
|
|
|
Volumen
|
143 |
|
DOI
|
|
|
Número de revista
|
8 |
|
Desde la página
|
399 |
|
Hasta la página
|
402 |
|
Mes
|
SIN MES |
|
Ranking
|
|