Descripción
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In this paper, we report the design of a GaN-based broad-band power amplifier using as active devices GaN high electron mobility transistors (HEMTs) grown on SiC substrates. The circuit is a 2-stage amplifier with microstrip corporative division/combination networks. Using devices with 0.5 um gate length and 1 mm gate width, a small-signal gain higher than 15 dB was obtained with 2-6 GHz bandwidth. An output power of 12.5W at 25 V is achieved in broadband and a saturation power of 18W at 4.5GHz is reported. The measured power-added efficiency is about 25-30% at 25 V. | |
Internacional
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No |
Nombre congreso
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XXIII Simposium Nacional de la Unión Científica Internacional de Radio. URSI 2008 |
Tipo de participación
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960 |
Lugar del congreso
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Madrid, España |
Revisores
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Si |
ISBN o ISSN
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978-84-612-6291-5 |
DOI
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Fecha inicio congreso
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22/09/2008 |
Fecha fin congreso
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24/09/2008 |
Desde la página
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1 |
Hasta la página
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4 |
Título de las actas
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CD Actas del XXIII Simposium Nacional de la Unión Científica Internacional de Radio. URSI 2008 |