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Descripción
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| This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These amplifiers have scalable output-stage periphery of 4 and 8 mm. The amplifiers are based on 1 mm AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They were fabricated in the European foundry SELEX Sistemi Integrati, which has a gate process technology of 0.5 ìm. The 4 mm amplifier has exhibited an output power of 15 W and the 8 mm of 28 W at Vds=25 V in pulsed conditions. The best power performance in continuous wave are 10.5 W and 15 W for 4 mm and 8 mm, respectively. Better than 20% PAE over the 2-6 GHz frequency range is achieved in CW. | |
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Internacional
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Si |
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Nombre congreso
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7th European Conference on Silicon Carbide and Related Material |
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Tipo de participación
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960 |
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Lugar del congreso
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Barcelona, España |
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Revisores
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Si |
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ISBN o ISSN
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978-3-908454-16-8 |
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DOI
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Fecha inicio congreso
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07/09/2008 |
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Fecha fin congreso
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11/09/2008 |
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Desde la página
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1 |
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Hasta la página
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4 |
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Título de las actas
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Actas 7th European Conference on Silicon Carbide and Related Material |