Memorias de investigación
Communications at congresses:
Two Broadband GaN MMIC Power Amplifiers for EW Systems
Year:2008

Research Areas
  • Processing and signal analysis

Information
Abstract
This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These amplifiers have scalable output-stage periphery of 4 and 8 mm. The amplifiers are based on 1 mm AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They were fabricated in the European foundry SELEX Sistemi Integrati, which has a gate process technology of 0.5 ìm. The 4 mm amplifier has exhibited an output power of 15 W and the 8 mm of 28 W at Vds=25 V in pulsed conditions. The best power performance in continuous wave are 10.5 W and 15 W for 4 mm and 8 mm, respectively. Better than 20% PAE over the 2-6 GHz frequency range is achieved in CW.
International
Si
Congress
7th European Conference on Silicon Carbide and Related Material
960
Place
Barcelona, España
Reviewers
Si
ISBN/ISSN
978-3-908454-16-8
Start Date
07/09/2008
End Date
11/09/2008
From page
1
To page
4
Actas 7th European Conference on Silicon Carbide and Related Material
Participants
  • Autor: Antonio Cetronio SELEX-SI
  • Autor: Claudio Lanzieri SELEX-SI
  • Autor: María Angeles González Garrido UPM
  • Autor: Pablo Cubilla Indra Sistemas
  • Autor: Jesus Grajal De la Fuente UPM

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microondas y Radar
  • Departamento: Señales, Sistemas y Radiocomunicaciones