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Descripción
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| The method involves using a thermodynamic screen layer that is arranged beneath the electronic device to block the transverse currents which are responsible for excess noise. A doping barrier layer (2) is arranged opposite to an epilayer (4) on the substrate (1) for reducing the transverse currents. A connection is made between the ohmic contact (7) of barrier layer and output from the epilayer of FET transistor which is used in the electronic device to eliminate the thermal noise from the capacitor located beneath the transistor. | |
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Internacional
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No |
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Estado
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Concedida |
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Referencia Patente Prioritaria
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WO2007054595-A2 |
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En explotación
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No |
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Fecha solicitud
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18/05/2007 |
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Titulares aparte de la UPM
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Universidad Politécnica de Madrid |