Research Publications in journals:
Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy
Year:2008
Research Areas
- Electronics engineering
Information
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Abstract
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| Relacionado con las lineas de investigacion delGrupo | |
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International
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Si |
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JCR
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Si |
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Title
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JOURNAL OF APPLIED PHYSICS |
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ISBN
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0021-8979 |
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Impact factor JCR
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2,171 |
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Impact info
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Volume
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104 |
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Journal number
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0 |
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From page
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083510 |
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To page
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083514 |
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Month
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ENERO |
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Ranking
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Open Access publication
Participants
- Autor: A. TRAMPERT
- Autor: e. LUNA
- Autor: J. CHRISTEN
- Autor: Sergio Fernandez Garrido UPM
- Autor: Juan Pereiro Viterbo UPM
- Autor: Elias Muñoz Merino UPM
- Autor: F. BERTRAM
- Autor: Andres Redondo Cubero UPM
- Autor: R. GAGO
- Autor: Enrique Calleja Pardo UPM
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Departamento: Ingeniería Electrónica