Research Publications in journals:
The effect of rapid thermal annealing on the photoluminescence of InAsN/InGaAs dot-in-a-well structures
Year:2008
Research Areas
- Electronics engineering
Information
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Abstract
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| Relacionado con las lineas de investigacion del Grupo | |
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International
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Si |
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JCR
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Si |
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Title
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JOURNAL OF PHYSICS D-APPLIED PHYSICS |
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ISBN
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0022-3727 |
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Impact factor JCR
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2,2 |
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Impact info
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Volume
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41 |
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Journal number
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0 |
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From page
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065413 |
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To page
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065414 |
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Month
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ENERO |
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Ranking
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Open Access publication
Participants
- Autor: J. MIGUEL-SANCHEZ
- Autor: Raquel Gargallo Caballero UPM
- Autor: Elias Muñoz Merino UPM
- Autor: Alvaro de Guzman Fernandez Gonzalez UPM
- Autor: Adrian Hierro Cano UPM
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Departamento: Ingeniería Electrónica