Observatorio de I+D+i UPM

Descripción
To reduce the electrothermal instabilities in silicon-on-glass high-frequency bipolar devices, the integration of thin-film aluminum nitride as a heatspreader is studied. The AlN is deposited by reactive sputtering and this material is shown to fulfill all the requirements for actively draining heat from RF IC’s, i.e., it has good process compatibility, sufficiently high thermal conductivity and good electrical isolation also at high frequencies. The residual stress and the piezoelectric character of the material, both of which can be detrimental for the present application, are minimized by a suitable choice of deposition conditions including variable biasing of the substrate in a multistep deposition cycle. Films of AlN as thick as 4 lm are successfully integrated in RF silicon-on-glass bipolar junction transistors that display a reduction of more than 70% in the value of the thermal resistance.
Internacional	Si
JCR del ISI	Si
Título de la revista	SOLID-STATE ELECTRONICS
ISSN	0038-1101
Factor de impacto JCR	1,259
Información de impacto
Volumen	52
DOI	10.1016
Número de revista	9
Desde la página	1359
Hasta la página	1363
Mes	SEPTIEMBRE
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Esta actividad pertenece a memorias de investigación

• Autor: Enrique Iborra Grau (UPM)
• Autor: Jimena Olivares Roza (UPM)
• Autor: Marta Clement Lorenzo (UPM)

• Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
• Departamento: Tecnología Electrónica