Descripción
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Piezoelectric deformations of thin, aluminum nitride (AlN) layers, on top of a silicon substrate, were studied by numerical calculations and interferometric measurements. Our calculation by finite element method demonstrates that substrate deformation under the top electrode may be comparable to the electric field induced deformation in the thin AlN layer, for a given applied voltage. Simulations also show the effect of a clamped or free substrate condition and the relative contributions of d33 and d31 piezoelectric constants. A Laser scanning vibrometry technique was used to measure deformations in the top surface with sub-picometer vertical resolution. By comparing calculations and experimental data, quantitative | |
Internacional
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Si |
Nombre congreso
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2008 IEEE International Ultrasonics Symposium |
Tipo de participación
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960 |
Lugar del congreso
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Beijing, CHINA |
Revisores
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Si |
ISBN o ISSN
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1051-0117 |
DOI
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10.1109/ULTSYM.2008.0218 |
Fecha inicio congreso
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02/11/2008 |
Fecha fin congreso
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05/11/2008 |
Desde la página
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903 |
Hasta la página
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906 |
Título de las actas
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2008 IEEE International Ultrasonics Symposium Proceedings |