Memorias de investigación
Communications at congresses:
Photoemission and Optical Studies of Electron Accumulation at InN and In-rich InGaN Surfaces
Year:2008

Research Areas
  • Electronics engineering

Information
Abstract
RELACIONADO CON LINEA DE INVESTIGACIÓN DEL GRUPO
International
Si
Congress
International Worshop on Nitride Semiconductor 2008
960
Place
Montreux (Suiza), 2008
Reviewers
No
ISBN/ISSN
0000-0000
Start Date
06/10/2008
End Date
10/10/2008
From page
0
To page
0
Photoemission and Optical Studies of Electron Accumulation at InN and In-rich InGaN Surfaces
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica