Memorias de investigación
Research Publications in journals:
Explanation for the dark I-V curve of III-V concentrator solar cells
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
The measurement of the dark I¿V curve is one of the most straightforward methods for characterizing solar cells. Consequently, an accurate knowledge of its meaning is of high relevance for the comprehension and technological feedback of these devices. In this paper, an explanation of the dark I¿V curve for concentrator III¿V solar cells is presented using a 3D (three-dimensional) model in order to provide a proper data fit that provides meaningful physical parameters that are also compatible and coherent with a data fit from illumination curves. The influence on the dark I¿V curve of the most significant series resistance components of concentrator solar cells is also analysed concluding that only the vertical component as well as the front contact-specific resistance can be assessable by means of this characterization method while both emitter and metal sheet resistances cannot be detected. For comparison purposes, the same experimental data have been fitted by means of a traditional two-diode model showing that, although an accurate dark I¿V curve fitting can be achieved, the extracted parameters are unable to reproduce illumination data since lumped models assume the same ohmic losses distribution for both dark and illumination conditions.
International
Si
JCR
Si
Title
PROGRESS IN PHOTOVOLTAICS
ISBN
1062-7995
Impact factor JCR
2,179
Impact info
Volume
16
Journal number
4
From page
331
To page
338
Month
ENERO
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física