Descripción
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A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer 50 nm grown at a low temperature 500 °C on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAs/Ge heterointerface decrease. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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APPLIED PHYSICS LETTERS |
ISSN
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0003-6951 |
Factor de impacto JCR
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3,596 |
Información de impacto
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Volumen
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92 |
DOI
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Número de revista
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0 |
Desde la página
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152102-1 |
Hasta la página
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152102-3 |
Mes
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ENERO |
Ranking
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