Research Publications in journals:
A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate
Year:2008
Research Areas
- Electronics engineering
Information
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Abstract
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| A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer 50 nm grown at a low temperature 500 °C on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAs/Ge heterointerface decrease. | |
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International
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Si |
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JCR
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Si |
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Title
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APPLIED PHYSICS LETTERS |
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ISBN
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0003-6951 |
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Impact factor JCR
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3,596 |
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Impact info
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Volume
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92 |
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Journal number
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0 |
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From page
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152102-1 |
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To page
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152102-3 |
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Month
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ENERO |
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Ranking
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Open Access publication
Participants
- Autor: W. Stolz
- Autor: Beatriz Galiana Blanco UPM
- Autor: Ignacio Rey-Stolle Prado UPM
- Autor: K Volz
- Autor: Carlos Algora Del Valle UPM
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Semiconductores III-V
- Centro o Instituto I+D+i: Instituto de Energía Solar
- Departamento: Electrónica Física