Research Publications in journals:
Te doping of GaAs using metalorganic vapor phase epitaxy: volatile vs. non volatile
Year:2008
Research Areas
- Electronics engineering
Information
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Abstract
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| The incorporation of Te into the crystal lattice, when it is used as an n-type dopant for GaAs grown by metalorganic vapor phase epitaxy, is studied. For this purpose, several growth temperatures, total pressures, growth rates, and substrate misorientations have been analyzed, from which it is concluded that depending on the substrate misorientation and total pressure used, the Te behaves like a volatile dopant or a nonvolatile dopant as result of the enhancement or minimization of its adsorption onto the growth surface. | |
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International
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Si |
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JCR
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Title
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JOURNAL OF APPLIED PHYSICS |
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ISBN
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0021-8979 |
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Impact factor JCR
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2,171 |
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Impact info
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Volume
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104 |
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Journal number
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0 |
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From page
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114906 |
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To page
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114908 |
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Month
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ENERO |
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Ranking
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Open Access publication
Participants
- Autor: Beatriz Galiana Blanco UPM
- Autor: Carlos Algora Del Valle UPM
- Autor: Ivan Garcia Vara UPM
- Autor: Ignacio Rey-Stolle Prado UPM
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Semiconductores III-V
- Centro o Instituto I+D+i: Instituto de Energía Solar
- Departamento: Electrónica Física