Memorias de investigación
Communications at congresses:
The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
Year:2008

Research Areas
  • Electronics engineering

Information
Abstract
RELACIONADO CON LINEAS DE INVESTIGACIÓN DEL GRUPO
International
Si
Congress
The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008
960
Place
Les Arcenaulx, Marseille (Francia), 2008
Reviewers
Si
ISBN/ISSN
0000-0000
Start Date
13/10/2008
End Date
15/10/2008
From page
0
To page
0
The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica