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Abstract
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| RELACIONADO CON LINEAS DE INVESTIGACIÓN DEL GRUPO | |
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International
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Si |
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Congress
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The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS), Les Arcenaulx, Marseille (Francia), 2008 |
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960 |
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Place
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Les Arcenaulx, Marseille (Francia), 2008 |
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Reviewers
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Si |
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ISBN/ISSN
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0000-0000 |
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Start Date
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13/10/2008 |
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End Date
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15/10/2008 |
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From page
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0 |
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To page
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0 |
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The influence of the Ga content on the N incorporation in InAsN and GaInNAs Quantum Dots 7th International Workshop on Epitaxial |