Memorias de investigación
Communications at congresses:
Growth and defect analysis of GaInP nucleation layers on germanium by MOVPE
Year:2008

Research Areas
  • Electronics engineering

Information
Abstract
The growth of III-V semiconductors on Ge substrates is a key issue for multijunction solar cells (MJC).
International
Si
Congress
14th International Conference on Metal Organic Vapour Phase Epitaxy
960
Place
Metz (Francia)
Reviewers
Si
ISBN/ISSN
99-999-99999
Start Date
01/06/2008
End Date
06/06/2008
From page
339
To page
340
Proceedings
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar