Communications at congresses:
The influence of Ga composition of GaInAsN QDs on N incorporation.
Year:2008
Research Areas
- Electronics engineering
Information
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Abstract
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| RELACIONADO CON LINEA DE INVESTIGACION DEL GRUPO | |
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International
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Si |
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Congress
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7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces |
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960 |
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Place
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Marsella (Francia) |
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Reviewers
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Si |
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ISBN/ISSN
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0000-0000 |
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Start Date
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21/04/2008 |
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End Date
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25/04/2008 |
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From page
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103 |
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To page
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105 |
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7th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces |
Open Access publication
Participants
- Autor: M. HOPKINSON
- Autor: Raquel Gargallo Caballero UPM
- Autor: Alvaro de Guzman Fernandez Gonzalez UPM
- Autor: Jose Maria Ulloa Herrero UPM
- Autor: Elias Muñoz Merino UPM
Research Group, Departaments and Institutes related
- Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
- Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
- Departamento: Ingeniería Electrónica