Descripción
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Direct heteroepitaxial growth of InP layers on GaAs 001 wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen H. The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 °C and different doses of H were used; after this, the growth proceeded without H while the temperature was increased slowly with time. The incorporation of H drastically increased the critical layer thickness observed by reflection high-energy electron diffraction; it also caused a slight increase in the luminescence at room temperature, while it also drastically changed the low-temperature luminescence related to the presence of stoichiometric defects. The samples were processed by rapid thermal annealing. The annealing improved the crystalline quality of the InP layers measured by high-resolution x-ray diffraction, but did not affect their luminescent behavior significantly. | |
Internacional
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Si |
JCR del ISI
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Si |
Título de la revista
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JOURNAL OF APPLIED PHYSICS |
ISSN
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0021-8979 |
Factor de impacto JCR
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2,171 |
Información de impacto
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Volumen
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103 |
DOI
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10.1063/1.2824967 |
Número de revista
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0 |
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