Observatorio de I+D+i UPM

Memorias de investigación
Artículos en revistas:
Comparative study of the luminescence of structures with Ge nanocrystals formed by dry and wet oxidation of SiGe films
Año:2007
Áreas de investigación
  • Industria electrónica
Datos
Descripción
The luminescence emission of structures containing Ge nanocrystals embedded in a dielectric matrix obtained by dry and wet oxidation of polycrystalline SiGe layers has been studied as a function of the oxidation time and initial SiGe layer thickness. A clear relationship between the intensity of the luminescence, the structure of the sample, the formation of Ge nanocrystals and the oxidation process parameters that allows us to select the appropriate process conditions to get the most efficient emission has been established. The evolution of the composition and thickness of the growing oxides and the remaining SiGe layer during the oxidation processes has been characterized using Raman spectroscopy, x-ray diffraction, Fourier-transform infrared spectroscopy, Rutherford backscattering spectrometry and transmission electron microscopy. For dry oxidation, the luminescence appears suddenly, regardless of the initial SiGe layer thickness, when all the Si of the SiGe has been oxidized and the remaining layer of the segregated Ge starts to be oxidized forming Ge nanocrystals. Luminescence is observed as long as Ge nanocrystals are present. For wet oxidation, the luminescence appears from the first stages of the oxidation, and is related to the formation of Ge-rich nanoclusters trapped in the mixed (Si and Ge) growing oxide. A sharp increase of the luminescence intensity for long oxidation times is also observed, due to the formation of Ge nanocrystals by the oxidation of the layer of segregated Ge. For both processes the luminescence is quenched when the oxidation time is long enough to cause the full oxidation of the Ge nanocrystals. The intensity of the luminescence in the dry oxidized samples is about ten times higher than in the wet oxidized ones for equal initial thickness of the SiGe layer.
Internacional
Si
JCR del ISI
Si
Título de la revista
NANOTECHNOLOGY
ISSN
0957-4484
Factor de impacto JCR
3,31
Información de impacto
Volumen
18
DOI
Número de revista
6
Desde la página
5702
Hasta la página
5712
Mes
SIN MES
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Participante: A.C. Prieto
  • Participante: A Torres
  • Participante: J Jiménez
  • Participante: C. Ballesteros
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Tomas Rodriguez Rodriguez (UPM)
  • Participante: A Kling
  • Participante: M. Avella
  • Autor: Jesus Sangrador Garcia (UPM)
  • Participante: M.I. Ortiz
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Departamento: Tecnología Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)