Memorias de investigación
Artículos en revistas:
Influence of the crystallization process on the luminescence of multilayers of SiGe nanocrystals embedded in SiO2
Año:2008
Áreas de investigación
  • Industria electrónica
Datos
Descripción
Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO2 onto Si wafers (in a single run at 390 ◦C and 50mTorr, using GeH4, Si2 H6 and O2) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80K and also at room temperature. The annealing conditions (temperatures ranging from 700 to 1000 ◦C and for times of 30 and 60 s) have been investigated in samples with different diameter of the nanoparticles (from ≈3 to ≥5 nm) and oxide interlayer thickness (15 and 35 nm) in order to establish a correlation between the rystallization of the nanoparticles, the degradation of their composition by Ge diffusion and the intensity of the luminescence emission band. Structures with small nanoparticles (3–4.5 nm) separated by thick oxide barriers (≈35 nm) annealed at 900 ◦C for 60 s yield the maximum intensity of the luminescence. An additional treatment at 450 ◦C in forming gas for dangling-bond passivation increases the intensity of the luminescence band by 25–30%.
Internacional
Si
JCR del ISI
Si
Título de la revista
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECH
ISSN
0921-5107
Factor de impacto JCR
1,33
Información de impacto
Volumen
2-3
DOI
10.1016/j.mseb.2007.08.015
Número de revista
147
Desde la página
200
Hasta la página
204
Mes
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica