Memorias de investigación
Communications at congresses:
Compositional analysis and evolution of defects formed on GaInP epilayers grown on Germanium
Year:2008

Research Areas
  • Electronics engineering

Information
Abstract
The growth of III-V semiconductors on germanium substrates is a key issue for multijunction soalr cells (MJSCs).
International
Si
Congress
9th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors
960
Place
Toledo (España)
Reviewers
Si
ISBN/ISSN
99-999-99999
Start Date
29/06/2008
End Date
03/07/2008
From page
48
To page
49
Proceedings
Participants

Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar