Descripción
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Nanocrystals embedded in an oxide matrix have been fabricated by annealing SiGeO films deposited by LPCVD. The composition of the oxide layers and its evolution after annealing as well as the presence and nature of nanocrystals in the films have been studied by several experimental techniques. The results are analyzed and discussed in terms of the main deposition parameters and the annealing temperature. | |
Internacional
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Si |
Nombre congreso
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Materials Research Society 2008 Spring Meeting |
Tipo de participación
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960 |
Lugar del congreso
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San Francisco, California, EEUU |
Revisores
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Si |
ISBN o ISSN
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DOI
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Fecha inicio congreso
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24/03/2008 |
Fecha fin congreso
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28/03/2008 |
Desde la página
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2 |
Hasta la página
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7 |
Título de las actas
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Amorphous and Polycristalline Silicon Science and Technology 2008 |