Descripción
|
|
---|---|
Multilayers of SiGe nanocrystals embedded in an oxide matrix have been fabricated by low-pressure chemical vapor deposition of SiGe and SiO2 onto Si wafers (in a single run at 390 ◦C and 50mTorr, using GeH4, Si2 H6 and O2) followed by a rapid thermal annealing treatment to crystallize the SiGe nanoparticles. The main emission band is located at 400 nm in both cathodoluminescence and photoluminescence experiments at 80K and also at room temperature. | |
Internacional
|
Si |
JCR del ISI
|
Si |
Título de la revista
|
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECH |
ISSN
|
0921-5107 |
Factor de impacto JCR
|
1,33 |
Información de impacto
|
|
Volumen
|
147 |
DOI
|
|
Número de revista
|
2 |
Desde la página
|
200 |
Hasta la página
|
204 |
Mes
|
ENERO |
Ranking
|