Memorias de investigación
Ponencias en congresos:
Raman Spectroscopy of group IV nanostructured semiconductors: influence of size, temperature and stress.
Año:2008
Áreas de investigación
  • Industria electrónica
Datos
Descripción
Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. However, the Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.
Internacional
Si
Nombre congreso
Materials Research Society 2008, Fall Meeting
Tipo de participación
960
Lugar del congreso
Boston, Massachusetts, EEUU
Revisores
Si
ISBN o ISSN
DOI
Fecha inicio congreso
01/12/2008
Fecha fin congreso
05/12/2008
Desde la página
0
Hasta la página
0
Título de las actas
Esta actividad pertenece a memorias de investigación
Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Departamento: Tecnología Electrónica