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Descripción
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| We have studied the potential of thin-film photovoltaic devices provided with an intermediate band (IB). Cucontaining chalcopyrites appear as promising candidates, with maximum theoretical efficiencies above 45% under ideal conditions. This figure has been re-evaluated by considering a number of non-idealities, like optical and current losses and non-radiative recombination that affect current chalcopyrite-based devices. Strategies for the practical implementation of IBs in chalcopyrite hosts will be discussed, including the incorporation of foreign impurities in the chalcopyrite structure at substitutional sites of the cation sublattice and the realisation of nanostructured devices. | |
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Internacional
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Si |
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Nombre congreso
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3rd International Workshop on Modulation Spectroscopy of Semiconductor Structures |
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Tipo de participación
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960 |
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Lugar del congreso
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Poland |
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Revisores
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Si |
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ISBN o ISSN
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1862-6300 |
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DOI
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Fecha inicio congreso
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03/06/2008 |
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Fecha fin congreso
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05/06/2008 |
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Desde la página
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1021 |
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Hasta la página
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1025 |
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Título de las actas
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Proccedings del Congreso Revista Physica Status Solidi A, vol 5 |