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Descripción
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| In this paper we present an original approach to estimate the heat affected zone in laser scribing processes for photovoltaic applications. We used high resolution IR-VIS Fourier transform spectrometry at micro-scale level for measuring the refractive index variations at different distances from the scribed line, and discussing then the results obtained for a-Si:H layers irradiated in different conditions that reproduce standard interconnection parameters. In order to properly assess the induced damage by the laser process, these results are compared with measurements of the crystalline state of the material using micro-Raman techniques. Additionally, the authors give details about how this technique could be used to feedback the laser process parametrization in monolithic interconnection of thin film photovoltaic devices based on a-Si:H. | |
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Internacional
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Si |
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JCR del ISI
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No |
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Título de la revista
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Proceedings of SPIE. The International Society for Optical Engineering |
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ISSN
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0277-786X |
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Factor de impacto JCR
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0 |
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Información de impacto
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Volumen
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7202 |
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DOI
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doi:10.1117/12.809514 |
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Número de revista
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0 |
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