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Descripción
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| In this paper we present an original approach to estimate the heat affected zone in laser scribing processes for photovoltaic applications. We used high resolution IR-VIS Fourier transform spectrometry at micro-scale level for measuring the refractive index variations at different distances from the scribed line, and discussing then the results obtained for a-Si:H layers irradiated in different conditions that reproduce standard interconnection parameters. In order to properly assess the induced damage by the laser process, these results are compared with measurements of the crystalline state of the material using micro-Raman techniques. Additionally, the authors give details about how this technique could be used to feedback the laser process parametrization in monolithic interconnection of thin film photovoltaic devices based on a-Si:H. | |
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Internacional
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Si |
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Nombre congreso
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Photonics West 2009 |
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Tipo de participación
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960 |
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Lugar del congreso
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San José. California. EE.UU. |
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Revisores
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Si |
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ISBN o ISSN
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0277-786X |
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DOI
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10.1117/12.809514 |
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Fecha inicio congreso
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24/01/2009 |
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Fecha fin congreso
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29/01/2009 |
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Desde la página
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72020 |
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Hasta la página
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72020 |
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Título de las actas
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Proceedings of the SPIE, Volume 7202 Laser-based Micro- and Nanopackaging and Assembly III |