Abstract
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Present vacuum microelectronics technology (VMET) is a field that has gained a great and sustained impulse during the last few decades. Electrons emitted from very sharp tips, as a result of an externally applied electric field, which is a consequence of a potential bias, tunnel through a potential energy barrier, resulting in an electric current. Since some applications require strong electric currents under low voltages, investigations of low workfunction materials or structures are of great practical importance. The next generation of such electron emitters requires a fine tuning of several parameters such as material work-function, surface structure, field strength, and temperature, in order to warrant that most part of the emission originates from electronic energy levels in the vicinity of the potential barrier. | |
International
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Si |
Congress
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Nano Spain Conference 2009 |
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960 |
Place
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Zaragoza, Spain |
Reviewers
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Si |
ISBN/ISSN
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00-0000-000-0 |
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Start Date
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09/03/2009 |
End Date
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12/03/2009 |
From page
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0 |
To page
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0 |
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Nanospain 2009 |